Integrated NanoMaterial Laboratory
Baolai Liang
(310) 983-3116
CNSI Building , Room 2133/2139

This core lab is currently equipped with two state-of-the-art Molecular Beam Epitaxy (MBE) reactors to provide semiconductor wafer growth foundry services. MBE-I is designed for providing (In, Ga, Al – As, Sb) epitaxial wafers, while MBE-II is designed to provide (In, Ga, Al – N) epitaxial wafers. This is the only (III-As / Sb + III-N) combined MBE system at UCLA. Our strengths in nanomaterial synthesis include growth of nanowires, quantum dots, and semiconductor films in the thickness of a single atom level.